N-Ch GaN FETs
Harnessing the superior properties of Gallium Nitride, our N-Ch GaN FETs offer ultra-fast switching speeds, exceptionally low on-resistance, and high power density. They are at the forefront of power conversion technology, enabling groundbreaking efficiency in data centers, electric vehicles, and renewable energy systems.
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11 products
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Case Type
Gate-Source Voltage(V)
Drain-Source Voltage(V)
V
–V
Continuous Drain Current(A)
A
–A
Power Dissipation(W)
W
–W
Total Gate Charge(nC)
Common Source Reverse Transfer Capacitance(µF)
Common Source Input Capacitance(µF)
Common Source Output Capacitance(µF)
Showing 1–11 of 11 products