Central Semiconductor’s New Schottky Bridge Rectifiers in low profile BR DFN package
HAUPPAUGE, NY, September 24, 2019 — Central Semiconductor Corp., a leading manufacturer of innovative discrete semiconductors, introduces its newest family of Schottky bridge rectifiers: CBRDFSH series, available in 1.0 A – 2.0 A, 40 V – 100 V options. Devices are packaged in the low-profile BR DFN surface mount case and feature highly desirable energy efficiency. These full wave bridge rectifiers utilize individual glass passivated die to reduce leakage and improve performance and reliability.
These devices feature forward voltage (VF) as low as 500 mV. The BR DFN package is 1.2 mm in height, 54% lower than the comparable HD DIP, ensuring that low board profile is maintained. CBRDFSH series devices are ideal for applications requiring a space-saving and energy-efficient Schottky bridge rectifier, including Power over Ethernet (PoE), intelligent lighting, and power adapters.
Series includes the following devices:
- CBRDFSH1-40 (1 A, 40 V)
- CBRDFSH1-60 (1 A, 60 V)
- CBRDFSH1-100 (1 A, 100 V)
- CBRDFSH2-40 (2 A, 40 V)
- CBRDFSH2-60 (2 A, 60 V)
- CBRDFSH2-100 (2 A, 100 V)
Central Semiconductor manufactures innovative discrete semiconductors to meet design engineers’ ever-changing challenges.
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