2N1482
55V,1.5A,5W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
3 V
Case Type
TO-39
Collector-Base Cutoff Current (ICBO)
500000 nA
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEV)
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
55 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1400 mV
Collector-Emitter Voltage (VCEO)
55 V
Collector-Emitter Voltage (VCEV)
100 V
Continuous Base Current
1 A
Continuous Collector Current
1.5 A
DC Current Gain (hFE)
35 — 100 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
10000 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
150 pF
Power Dissipation
5 W
Small Signal Current Gain (hfe)
50 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
35 °C/W
Turn Off Time (toff)
1600 ns
Turn On Time (ton)
1200 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 55V,1.5A,5W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Box | 500 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N1479-1482.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |