2N1700
40V,1A,5W Through-Hole Transistor-Small Signal (<=1A) NPN High Current
Specifications
Base-Emitter On Voltage (VBE(ON))
2 V
Case Type
TO-39
Collector-Base Cutoff Current (ICBO)
1000000 nA
Collector-Base Cutoff Current (ICBO)
75000 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEV)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
40 V
Collector-Emitter Voltage (VCEV)
60 V
Continuous Base Current
750 mA
Continuous Collector Current
1 A
DC Current Gain (hFE)
20 — 80 x10³
Delay Time (td)
200 ns
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
25000 nA
Emitter-Base Voltage
6 V
Fall Time (tf)
1000 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
150 pF
Power Dissipation
5 W
Rise Time (tr)
1000 ns
Small Signal Current Gain (hfe)
40 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
600 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 40V,1A,5W Through-Hole Transistor-Small Signal (<=1A) NPN High Current | Box | 500 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP059.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |