Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
75 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
75 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
0.01 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
800 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
75 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
40 x10³
Device Family
Transistors
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
8 pF
Power Dissipation
800 mW
Power Dissipation
3 W
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
285 ns
Turn On Time (ton)
35 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 40V,800mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current | Box | 500 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| 2N2219-19A.PDF | Device Datasheet |
| Product EOL Notice:TO-5 CASE | Product EOL Notice |