2N2222A
40V,800mA,500mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 1.2 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
75 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Time Constant (rb'Cc)
150 ps
Collector-Base Voltage
75 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
0.01 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
800 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
75 x10³
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
50 x10³
Delay Time (td)
10 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
6 V
Fall Time (tf)
60 ns
HTS Code
8541.21.0075
Input Capacitance (Cib)
25 pF
Input Impedance Common Emitter (hie)
0.25 — 1.25 kΩ
Input Impedance Common Emitter (hie)
2 — 8 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
4 dB
Output Admittance Common Emitter (hoe)
25 — 200 µS
Output Admittance Common Emitter (hoe)
5 — 35 µS
Output Capacitance (Cob)
8 pF
Power Dissipation
1.8 W
Power Dissipation
500 mW
Rise Time (tr)
25 ns
Small Signal Current Gain (hfe)
75 — 375 x10³
Small Signal Current Gain (hfe)
50 — 300 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
225 ns
Thermal Resistance Junction-Ambient
350 °C/W
Thermal Resistance Junction-Case
97 °C/W
Voltage Feedback Ratio Common Emitter (hre)
0.4 x10⁻³
Voltage Feedback Ratio Common Emitter (hre)
0.8 x10⁻³
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 40V,800mA,500mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current | Box | 2,000 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N2221A.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |
| Spice Model:Spice Model 2N2222A | Spice Model |