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AEM

2N2270

45V,1A,1W Through-Hole Transistor-Small Signal (<=1A) NPN High Current

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
50000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCER)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Saturation Voltage (VCE(SAT))
900 mV
Collector-Emitter Voltage (VCEO)
45 V
Collector-Emitter Voltage (VCER)
60 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
50 — 200 x10³
DC Current Gain (hFE)
30 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
7 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0065
Input Capacitance (Cib)
80 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
10 dB
Output Capacitance (Cob)
15 pF
Power Dissipation
5 W
Power Dissipation
1 W
Small Signal Current Gain (hfe)
5 — 275 x10³
Small Signal Current Gain (hfe)
5 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
175 °C/W
Thermal Resistance Junction-Case
35 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active45V,1A,1W Through-Hole Transistor-Small Signal (<=1A) NPN High CurrentBox500LEAD or TINNo

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
2N2270.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data

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