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AEM

2N2303

35V,.6W Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
TO-39
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCER)
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
35 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCEO)
35 V
Collector-Emitter Voltage (VCER)
50 V
DC Current Gain (hFE)
75 x10³
DC Current Gain (hFE)
75 — 200 x10³
ECCN Code
EAR99
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 175 °C
Output Capacitance (Cob)
45 pF
Power Dissipation
2 W
Power Dissipation
600 mW
Small Signal Current Gain (hfe)
3 x10³
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active35V,.6W Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchBox500PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
LSSGP060.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data

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