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AEM

2N2405

90V,1A,1W Through-Hole Transistor-Small Signal (<=1A) NPN High Current

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
120 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
120 V
Collector-Emitter Breakdown Voltage (BVCER)
140 V
Collector-Emitter Breakdown Voltage (BVCER)
120 V
Collector-Emitter Breakdown Voltage (BVCEO)
90 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
90 V
Collector-Emitter Voltage (VCER)
140 V
Collector-Emitter Voltage (VCEV)
120 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
120 MHz
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
60 — 200 x10³
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
7 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0065
Input Capacitance (Cib)
85 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
15 pF
Power Dissipation
5 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active90V,1A,1W Through-Hole Transistor-Small Signal (<=1A) NPN High CurrentBox500LEAD or TINNo

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
2N2405.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data
Spice Model:Spice Model 2N2405Spice Model

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