2N2484A
60V,50mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise
Specifications
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
0.002 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
175 x10³
DC Current Gain (hFE)
250 x10³
DC Current Gain (hFE)
800 x10³
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0095
Input Capacitance (Cib)
6 pF
Input Impedance Common Emitter (hie)
3.5 — 24 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
3 dB
Output Admittance Common Emitter (hoe)
40 µS
Output Capacitance (Cob)
6 pF
Power Dissipation
360 mW
Small Signal Current Gain (hfe)
150 — 900 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
486 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 60V,50mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise | Box | 2,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N2484A.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |