2N2608
1V,4V,50mA,300mW Through-Hole JFET P Channel
Specifications
Case Type
TO-18
Common Source Input Capacitance (Ciss)
17 pF
Continuous Gate Current
50 mA
Drain-Gate Voltage
30 V
Drain-Source Voltage
30 V
ECCN Code
EAR99
Forward Transadmittance (gfs)
1 mS
Gate Leakage Current (IGSS)
10 nA
Gate-Source Breakdown Voltage (BVGSS)
30 V
Gate-Source Cutoff Voltage (VGS(OFF))
1 — 4 V
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.21.0095
Noise Figure (NF)
3 dB
Power Dissipation
300 mW
Saturation Drain Current (IDSS)
900 — 4500 µA
Storage Temperature (Tstg)
-60 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 1V,4V,50mA,300mW Through-Hole JFET P Channel | Box | 2,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP100.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Process Change Notice:P-CHANNEL JFETS | Process Change Notice |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |