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2N2714

18V,200mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
TO-92
Collector-Base Cutoff Current (ICBO)
15000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
18 V
Collector-Emitter Breakdown Voltage (BVCEO)
18 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
18 V
Continuous Collector Current
200 mA
DC Current Gain (hFE)
75 — 225 x10³
Delay Time (td)
60 ns
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
500 nA
Emitter-Base Voltage
5 V
Fall Time (tf)
40 ns
HTS Code
8541.21.0095
Junction Temperature (Tj)
-55 — 100 °C
Power Dissipation
360 mW
Rise Time (tr)
85 ns
Storage Temperature (Tstg)
-55 — 125 °C
Storage Time (ts)
85 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active18V,200mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox2,500LEAD or TINNo

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