2N2865
13V,50mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
TO-72
Collector-Base Breakdown Voltage (BVCBO)
25 V
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Time Constant (rb'Cc)
15 ps
Collector-Base Voltage
25 V
Collector-Emitter Breakdown Voltage (BVCEO)
13 V
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
13 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
600 MHz
DC Current Gain (hFE)
20 — 200 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Voltage
3 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
4.5 dB
Output Capacitance (Cob)
2.5 pF
Power Dissipation
300 mW
Power Dissipation
200 mW
Power Output (Pout)
40 mW
Small Signal Current Gain (hfe)
20 — 200 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 13V,50mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator | Box | 2,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Aluminum Wire | Analytical Test Report |
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Epoxy Adhesive | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP069.PDF | Device Datasheet |
| Material Composition:TO-72 | Material Composition |
| Package Detail Document:TO-72 | Package Detail Document |
| Process Change Notice:HEADER TO-72 | Process Change Notice |
| Process Change Notice:TO-72 Case | Process Change Notice |
| Process Change Notice:TO-72 CASE | Process Change Notice |
| Product Reliability Data:TO-72 Package Reliability | Product Reliability Data |