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AEM

2N2895

65V,1A,500mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
120 V
Collector-Base Cutoff Current (ICBO)
2000 nA
Collector-Base Cutoff Current (ICBO)
2 nA
Collector-Base Voltage
120 V
Collector-Emitter Breakdown Voltage (BVCER)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
65 V
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Voltage (VCEO)
65 V
Collector-Emitter Voltage (VCER)
80 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
120 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
40 — 120 x10³
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
10 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
7 V
Emitter-Base Cutoff Current (IEBO)
2 nA
Emitter-Base Voltage
7 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
80 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
8 dB
Output Capacitance (Cob)
15 pF
Power Dissipation
1.8 W
Power Dissipation
500 mW
Small Signal Current Gain (hfe)
50 — 200 x10³
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active65V,1A,500mW Through-Hole Transistor-Small Signal (<=1A) NPN High CurrentBox2,000LEAD or TINNo

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
2N2895_SERIES.PDFDevice Datasheet
Material Composition:TO-18Material Composition
Package Detail Document:TO-18Package Detail Document
Product Reliability Data:TO-18 Package ReliabilityProduct Reliability Data

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