2N2896
90V,1A,500mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
140 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
140 V
Collector-Emitter Breakdown Voltage (BVCER)
140 V
Collector-Emitter Breakdown Voltage (BVCEO)
90 V
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Voltage (VCEO)
90 V
Collector-Emitter Voltage (VCER)
140 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
120 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
60 — 200 x10³
DC Current Gain (hFE)
35 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
7 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
7 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
80 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
8 dB
Output Capacitance (Cob)
15 pF
Power Dissipation
1.8 W
Power Dissipation
500 mW
Small Signal Current Gain (hfe)
50 — 275 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 90V,1A,500mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current | Box | 2,000 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N2895_SERIES.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |