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AEM

2N2918

45V,30mA,300mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN Low Noise Amplifier

Specifications

B-E Voltage Differential Change Due To Temperature (Δ(VBE1-VBE2))
20 µV/°C
B-E Voltage Differential Change Due To Temperature (Δ(VBE1-VBE2))
20 µV/°C
Base-Emitter On Voltage (VBE(ON))
0.7 V
Base-Emitter On Voltage Matching (|VBE1-VBE2|)
5 mV
Base-Emitter On Voltage Matching (|VBE1-VBE2|)
10 mV
Base-Emitter On Voltage Matching (|VBE1-VBE2|)
10 mV
Case Type
TO-78
Collector-Base Breakdown Voltage (BVCBO)
45 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
45 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Cutoff Current (ICEO)
0.002 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current
30 mA
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
225 x10³
DC Current Gain (hFE)
300 x10³
DC Current Gain (hFE)
150 — 600 x10³
DC Current Gain Matching (hFE1/hFE2)
0.8 — 1
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
2 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0095
Input Impedance Common Base (hib)
25 — 32 Ω
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
3 dB
Noise Figure (NF)
3 dB
Output Admittance Common Base (hob)
1 µS
Output Capacitance (Cob)
6 pF
Power Dissipation
750 mW
Power Dissipation
500 mW
Power Dissipation
1.5 W
Power Dissipation
300 mW
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued45V,30mA,300mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN Low Noise AmplifierBox100PBFREE

Resources

ItemType
2N2918.PDFDevice Datasheet
Material Composition:TO-78Material Composition
Package Detail Document:TO-78Package Detail Document
Product EOL Notice:TO-78 CASEProduct EOL Notice

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