2N3020
80V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
140 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Time Constant (rb'Cc)
400 ps
Collector-Base Voltage
140 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
40 — 200 x10³
DC Current Gain (hFE)
40 — 200 x10³
DC Current Gain (hFE)
30 — 120 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
30 — 200 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
7 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
7 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
60 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
12 pF
Power Dissipation
5 W
Power Dissipation
800 mW
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 80V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N3019 SERIES.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |