2N3107
60V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
100 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICES)
0.01 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
70 MHz
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
100 — 300 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
7 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
7 V
HTS Code
8541.21.0095
Input Capacitance (Cib)
80 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
7 dB
Output Capacitance (Cob)
20 pF
Power Dissipation
5 W
Power Dissipation
800 mW
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
1000 ns
Turn On Time (ton)
200 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 60V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current | Box | 500 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP061.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |