2N3114
150V,200mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
150 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
150 V
Collector-Emitter Breakdown Voltage (BVCEO)
150 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
150 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
40 MHz
DC Current Gain (hFE)
30 — 120 x10³
DC Current Gain (hFE)
12 x10³
DC Current Gain (hFE)
15 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Input Capacitance (Cib)
80 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
9 pF
Power Dissipation
5 W
Power Dissipation
800 mW
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 150V,200mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N3114.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |