2N3133
35V,600mA,600mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch
Specifications
Base Cutoff Current (IBL)
100 nA
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Cutoff Current (ICBO)
30000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
35 V
Collector-Emitter Cutoff Current (ICEV)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Voltage (VCEO)
35 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
40 — 120 x10³
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4 V
Emitter-Base Voltage
4 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
40 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
10 pF
Power Dissipation
3 W
Power Dissipation
600 mW
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
150 ns
Turn On Time (ton)
75 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 35V,600mA,600mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP061.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product EOL Notice:CPP57 CHIP PROCESS | Product EOL Notice |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |