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AEM

2N3246

45V,50mA,350mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.7 — 0.9 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
2000 nA
Collector-Base Cutoff Current (ICBO)
1 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
60 — 180 MHz
DC Current Gain (hFE)
200 — 600 x10³
DC Current Gain (hFE)
300 x10³
DC Current Gain (hFE)
350 x10³
DC Current Gain (hFE)
400 x10³
DC Current Gain (hFE)
800 x10³
DC Current Gain (hFE)
150 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
10 V
Emitter-Base Cutoff Current (IEBO)
1 nA
Emitter-Base Voltage
10 V
HTS Code
8541.21.0075
Input Impedance Common Base (hib)
24 — 32 Ω
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
2 dB
Output Admittance Common Base (hob)
0.1 — 1 µS
Output Capacitance (Cob)
5 pF
Power Dissipation
350 mW
Small Signal Current Gain (hfe)
200 — 600 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
0.5 K/W
Voltage Feedback Ratio Common Base (hrb)
0.6 x10⁻³

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active45V,50mA,350mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,000PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
2N3246.PDFDevice Datasheet
Material Composition:TO-18Material Composition
Package Detail Document:TO-18Package Detail Document
Product Reliability Data:TO-18 Package ReliabilityProduct Reliability Data

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