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AEM

2N3251A

60V,200mA,360mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 0.9 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEV)
0.02 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
90 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
80 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
6 dB
Output Capacitance (Cob)
6 pF
Power Dissipation
1.2 W
Power Dissipation
360 mW
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
486 °C/W
Thermal Resistance Junction-Case
146 °C/W
Turn Off Time (toff)
250 ns
Turn On Time (ton)
70 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active60V,200mA,360mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchBox2,000PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
2N3250.PDFDevice Datasheet
Material Composition:TO-18Material Composition
Package Detail Document:TO-18Package Detail Document
Product Reliability Data:TO-18 Package ReliabilityProduct Reliability Data

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