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AEM

2N3302

30V,1.8W Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Cutoff Current (ICES)
0.01 µA
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
220 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Voltage (VCEO)
30 V
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
300 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
50 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
20 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
8 pF
Power Dissipation
360 mW
Power Dissipation
1.8 W
Small Signal Current Gain (hfe)
2.5 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
486 °C/W
Thermal Resistance Junction-Case
97.3 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active30V,1.8W Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox2,000PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
LSSGP056.PDFDevice Datasheet
Material Composition:TO-18Material Composition
Package Detail Document:TO-18Package Detail Document
Product Reliability Data:TO-18 Package ReliabilityProduct Reliability Data

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