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2N3391A

25V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
25 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
25 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Voltage (VCEO)
25 V
Continuous Collector Current
500 mA
DC Current Gain (hFE)
250 — 500 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
5 dB
Output Capacitance (Cob)
2 — 10 pF
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
250 — 800 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active25V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,500LEAD or TINNo
Active25V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseAmmo2,000LEAD or TINNo
Active25V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseTape & Reel2,000LEAD or TINNo

Resources

ItemType
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Analytical Test Report:Halogen FreeAnalytical Test Report
Analytical Test Report:Lead FrameAnalytical Test Report
Analytical Test Report:Pure Tin Solder, SnAnalytical Test Report
Analytical Test Report:Tin PlatingAnalytical Test Report
2N3391A-3393.PDFDevice Datasheet
Material Composition:TO-92Material Composition
Package Detail Document:TO-92Package Detail Document
Product Reliability Data:TO-92 Package ReliabilityProduct Reliability Data

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