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AEM

2N3421

80V,3A,1W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.7 — 1.4 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 1.2 V
Case Type
TO-39
Collector-Base Voltage
125 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICEV)
0.5 µA
Collector-Emitter Cutoff Current (ICEV)
50 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current
3 A
Current Gain-Bandwidth Product (fT)
40 MHz
DC Current Gain (hFE)
40 — 120 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
10000 nA
Emitter-Base Cutoff Current (IEBO)
500 nA
Emitter-Base Voltage
8 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
150 pF
Peak Collector Current
5 A
Power Dissipation
15 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
175 °C/W
Thermal Resistance Junction-Case
6.67 °C/W
Turn Off Time (toff)
1200 ns
Turn On Time (ton)
300 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued80V,3A,1W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/SwitchBox500TINNo

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