2N3442
140V,10A,117W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
5.7 V
Case Type
TO-3
Collector-Base Voltage
160 V
Collector-Emitter Breakdown Voltage (BVCEO)
140 V
Collector-Emitter Cutoff Current (ICEO)
200000 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
5000 mV
Collector-Emitter Voltage (VCEO)
140 V
Collector-Emitter Voltage (VCEV)
160 V
Continuous Base Current
7 A
Continuous Collector Current
10 A
Current Gain-Bandwidth Product (fT)
0.08 MHz
DC Current Gain (hFE)
7.5 x10³
DC Current Gain (hFE)
20 — 70 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
5000000 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Peak Collector Current
15 A
Power Dissipation
117 W
Small Signal Current Gain (hfe)
12 — 72 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
1.5 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Discontinued | 140V,10A,117W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Sleeve | 20 | TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| 2N3442.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Process Change Notice:2N3442 | Process Change Notice |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |