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AEM

2N3496

80V,100mA,400mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 0.9 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
35 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4.5 V
Emitter-Base Cutoff Current (IEBO)
25 nA
Emitter-Base Voltage
4.5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
30 pF
Input Impedance Common Emitter (hie)
0.1 — 1.2 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Output Admittance Common Emitter (hoe)
300 µS
Output Capacitance (Cob)
7 pF
Power Dissipation
1.8 W
Power Dissipation
400 mW
Small Signal Current Gain (hfe)
40 — 300 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
450 ns
Turn On Time (ton)
300 ns
Voltage Feedback Ratio Common Emitter (hre)
0.2 x10⁻³

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active80V,100mA,400mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchBox2,000LEAD or TINNo

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
LSSGP056.PDFDevice Datasheet
Material Composition:TO-18Material Composition
Package Detail Document:TO-18Package Detail Document
Product Reliability Data:TO-18 Package ReliabilityProduct Reliability Data

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