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AEM

2N3501

150V,300mA,1W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
150 V
Collector-Base Cutoff Current (ICBO)
50000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
150 V
Collector-Emitter Breakdown Voltage (BVCEO)
150 V
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
150 V
Continuous Collector Current
300 mA
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
75 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
35 x10³
Delay Time (td)
20 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
25 nA
Emitter-Base Voltage
6 V
Fall Time (tf)
80 ns
HTS Code
8541.29.0065
Input Capacitance (Cib)
80 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
8 pF
Power Dissipation
5 W
Power Dissipation
1 W
Rise Time (tr)
35 ns
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
800 ns
Thermal Resistance Junction-Ambient
175 °C/W
Thermal Resistance Junction-Case
35 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active150V,300mA,1W Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageBox500LEAD or TINNo

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