2N3548
45V,100mA,400mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 1 V
Case Type
TO-18
Collector-Base Voltage
60 V
Collector-Emitter Cutoff Current (ICES)
0.01 µA
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
600 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
100 — 300 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
4 dB
Output Capacitance (Cob)
8 pF
Power Dissipation
400 mW
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 45V,100mA,400mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise | Box | 2,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP056.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |