2N3583
175V,1A,35W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
1.4 V
Case Type
TO-66
Collector-Base Voltage
250 V
Collector-Emitter Breakdown Voltage (BVCEO)
175 V
Collector-Emitter Cutoff Current (ICEO)
10000 µA
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
3000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
5000 mV
Collector-Emitter Voltage (VCEO)
175 V
Continuous Base Current
1 A
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
10 MHz
DC Current Gain (hFE)
40 — 200 x10³
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
5000000 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
120 pF
Peak Collector Current
5 A
Power Dissipation
35 W
Second Breakdown Collector Current (Is/b)
0.35 A
Small Signal Current Gain (hfe)
25 — 350 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
5 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Discontinued | 175V,1A,35W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Sleeve | 30 | TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Leads | Analytical Test Report |
| 2N3583-3585.PDF | Device Datasheet |
| Material Composition:TO-66 | Material Composition |
| Package Detail Document:TO-66 | Package Detail Document |
| Process Change Notice:CP319 replaced by CP212 | Process Change Notice |
| Product EOL Notice:BCY79-VIII | Product EOL Notice |
| Product Reliability Data:TO-66 Package Reliablity | Product Reliability Data |