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AEM

2N3635

140V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.65 — 0.9 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
140 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
140 V
Collector-Emitter Breakdown Voltage (BVCEO)
140 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
140 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
90 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
80 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Input Capacitance (Cib)
75 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
3 dB
Output Capacitance (Cob)
10 pF
Power Dissipation
5 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
175 °C/W
Thermal Resistance Junction-Case
35 °C/W
Turn Off Time (toff)
600 ns
Turn On Time (ton)
400 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active140V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High VoltageBox500PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
2N3634.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data

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