2N3637
175V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.65 — 0.9 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
175 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
175 V
Collector-Emitter Breakdown Voltage (BVCEO)
175 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
175 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
90 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
80 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Input Capacitance (Cib)
75 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
10 pF
Power Dissipation
5 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
175 °C/W
Thermal Resistance Junction-Case
35 °C/W
Turn Off Time (toff)
600 ns
Turn On Time (ton)
400 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 175V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N3637.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |