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2N3706

20V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current

Specifications

Base-Emitter On Voltage (VBE(ON))
0.5 — 1 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
20 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
20 V
Continuous Collector Current
800 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
30 — 600 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
12 pF
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active20V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High CurrentBox2,500LEAD or TINNo
Active20V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High CurrentAmmo2,000LEAD or TINNo
Active20V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High CurrentTape & Reel2,000LEAD or TINNo

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