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2N3708

30V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.5 — 1 V
Case Type
TO-92
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current
200 mA
DC Current Gain (hFE)
45 — 660 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
45 — 800 x10³
Storage Temperature (Tstg)
-65 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active30V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,500LEAD or TINNo
Active30V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,000PBFREE
Active30V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseAmmo2,000LEAD or TINNo
Active30V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseTape & Reel2,000LEAD or TINNo

Resources

ItemType
Analytical Test Report:Copper Bonding WireAnalytical Test Report
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Analytical Test Report:Halogen FreeAnalytical Test Report
Analytical Test Report:Lead FrameAnalytical Test Report
Analytical Test Report:Pure Tin Solder, SnAnalytical Test Report
Analytical Test Report:Tin PlatingAnalytical Test Report
2N3707-3711.PDFDevice Datasheet
Material Composition:TO-92Material Composition
Package Detail Document:TO-92Package Detail Document
Product Reliability Data:TO-92 Package ReliabilityProduct Reliability Data

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