2N3725A
50V,1.2A,1W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.76 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.86 V
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 — 1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 — 1.4 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
50000 nA
Collector-Base Cutoff Current (ICBO)
500 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCES)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
50 V
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
260 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
520 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
800 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
900 mV
Collector-Emitter Voltage (VCEO)
50 V
Continuous Collector Current
1.2 A
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
60 — 150 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
30 x10³
Delay Time (td)
10 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
Fall Time (tf)
25 ns
HTS Code
8541.29.0065
Input Capacitance (Cib)
55 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
10 pF
Peak Collector Current
1.75 A
Power Dissipation
5 W
Power Dissipation
1 W
Rise Time (tr)
30 ns
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
50 ns
Turn Off Time (toff)
50 ns
Turn Off Time (toff)
60 ns
Turn On Time (ton)
50 ns
Turn On Time (ton)
35 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Discontinued | 50V,1.2A,1W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Box | 500 | TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N3724.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product EOL Notice:CP337V WAFER PROCESS | Product EOL Notice |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |
| Spice Model:Spice Model 2N3725A | Spice Model |