2N3738
225V,1A,20W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Specifications
Base-Emitter On Voltage (VBE(ON))
1 V
Case Type
TO-66
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Voltage
250 V
Collector-Emitter Breakdown Voltage (BVCEO)
225 V
Collector-Emitter Cutoff Current (ICEO)
250 µA
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2500 mV
Collector-Emitter Voltage (VCEO)
225 V
Continuous Base Current
500 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
10 MHz
DC Current Gain (hFE)
40 — 200 x10³
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
30 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
20 pF
Peak Base Current
1 A
Peak Collector Current
2 A
Power Dissipation
20 W
Small Signal Current Gain (hfe)
35 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
7.5 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 225V,1A,20W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | Sleeve | 30 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Leads | Analytical Test Report |
| 2N3738-3739.PDF | Device Datasheet |
| Material Composition:TO-66 | Material Composition |
| Package Detail Document:TO-66 | Package Detail Document |
| Process Change Notice:CP319 replaced by CP212 | Process Change Notice |
| Product EOL Notice:BCY79-VIII | Product EOL Notice |
| Product Reliability Data:TO-66 Package Reliablity | Product Reliability Data |