2N3766
60V,4A,25W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
1.5 V
Case Type
TO-66
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
500 µA
Collector-Emitter Cutoff Current (ICEV)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2500 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
2 A
Continuous Collector Current
4 A
Current Gain-Bandwidth Product (fT)
10 MHz
DC Current Gain (hFE)
40 — 160 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
30 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
500000 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
50 pF
Power Dissipation
25 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
7 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Discontinued | 60V,4A,25W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Sleeve | 30 | TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Leads | Analytical Test Report |
| 2N3766_3767.PDF | Device Datasheet |
| Material Composition:TO-66 | Material Composition |
| Package Detail Document:TO-66 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-66 Package Reliablity | Product Reliability Data |