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2N3819

8V,10mA,360mW Through-Hole JFET N Channel

Specifications

Case Type
TO-92
Common Source Input Capacitance (Ciss)
8 pF
Common Source Reverse Transfer Capacitance (Crss)
4 pF
Continuous Gate Current
10 mA
Drain-Gate Voltage
25 V
Drain-Source Voltage
25 V
ECCN Code
EAR99
Forward Transadmittance (gfs)
1.6 mS
Forward Transadmittance (gfs)
2 — 6.5 mS
Gate Leakage Current (IGSS)
2000 nA
Gate Leakage Current (IGSS)
2 nA
Gate-Source Breakdown Voltage (BVGSS)
25 V
Gate-Source Cutoff Voltage (VGS(OFF))
0.5 — 7.5 V
Gate-Source Cutoff Voltage (VGS(OFF))
8 V
Gate-Source Voltage (VGS)
25 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Output Conductance (gos)
50 µS
Power Dissipation
360 mW
Saturation Drain Current (IDSS)
2000 — 20000 µA
Storage Temperature (Tstg)
-65 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active8V,10mA,360mW Through-Hole JFET N ChannelBox2,500LEAD or TINNo
Active8V,10mA,360mW Through-Hole JFET N ChannelBox2,000PBFREE
Active8V,10mA,360mW Through-Hole JFET N ChannelAmmo2,000LEAD or TINNo
Active8V,10mA,360mW Through-Hole JFET N ChannelTape & Reel2,000LEAD or TINNo

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