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2N3859A

60V,100mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.78 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
125 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
90 — 250 MHz
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
100 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
10 pF
Junction Temperature (Tj)
-55 — 125 °C
Output Capacitance (Cob)
2 — 4 pF
Power Dissipation
360 mW
Storage Temperature (Tstg)
-55 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued, Stock Only60V,100mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,500PBFREE
Discontinued, Stock Only60V,100mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseTape & Reel2,000PBFREE

Resources

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Analytical Test Report:Tin PlatingAnalytical Test Report
2N3859A.PDFDevice Datasheet
Material Composition:TO-92Material Composition
Package Detail Document:TO-92Package Detail Document
Product Reliability Data:TO-92 Package ReliabilityProduct Reliability Data

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