2N3866A
30V,400mA,5W Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator
Specifications
Amplifier Power Gain (Gpe)
10 dB
Case Type
TO-39
Collector Efficiency (η)
45 %
Collector-Base Breakdown Voltage (BVCBO)
55 V
Collector-Base Voltage
55 V
Collector-Emitter Breakdown Voltage (BVCER)
55 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Cutoff Current (ICEO)
20 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Base Current
200 mA
Continuous Collector Current
400 mA
Current Gain-Bandwidth Product (fT)
800 MHz
DC Current Gain (hFE)
5 x10³
DC Current Gain (hFE)
25 — 200 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3.5 V
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
3.5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
3 pF
Power Dissipation
5 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
35 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 30V,400mA,5W Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N3866_SERIES.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product EOL Notice:RF TRANSISTOR DIE | Product EOL Notice |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |