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2N3903

40V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.95 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.65 — 0.85 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
0.05 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
50 — 200 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
6 dB
Output Capacitance (Cob)
4 pF
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
50 — 200 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Turn Off Time (toff)
225 ns
Turn On Time (ton)
70 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active40V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchAmmo2,000LEAD or TINNo
Active40V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchTape & Reel2,000LEAD or TINNo

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