2N4013
30V,500mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.76 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.86 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 — 1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.7 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Cutoff Current (ICBO)
120000 nA
Collector-Base Cutoff Current (ICBO)
1700 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCES)
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
260 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
320 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
420 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
650 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Voltage (VCEO)
30 V
Collector-Emitter Voltage (VCES)
50 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
60 — 150 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
30 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
55 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
10 pF
Peak Collector Current
1 A
Power Dissipation
1.2 W
Power Dissipation
360 mW
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
60 ns
Turn On Time (ton)
35 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Discontinued | 30V,500mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch | Box | 2,000 | TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP057.PDF | Device Datasheet |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Product EOL Notice:CP337V WAFER PROCESS | Product EOL Notice |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |