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AEM

2N4029

80V,1A,500mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
TO-18
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
50000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
150 — 500 MHz
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
70 x10³
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
75 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
Fall Time (tf)
50 ns
HTS Code
8541.21.0075
Input Capacitance (Cib)
110 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
20 pF
Power Dissipation
2 W
Power Dissipation
500 mW
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
350 ns
Turn On Time (ton)
100 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active80V,1A,500mW Through-Hole Transistor-Small Signal (<=1A) PNP High CurrentBox2,000LEAD or TINNo

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
LSSGP057.PDFDevice Datasheet
Material Composition:TO-18Material Composition
Package Detail Document:TO-18Package Detail Document
Product Reliability Data:TO-18 Package ReliabilityProduct Reliability Data
Spice Model:Spice Model 2N4029Spice Model

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