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AEM

2N4032

60V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current

Specifications

Base-Emitter On Voltage (VBE(ON))
1.1 V
Base-Emitter On Voltage (VBE(ON))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
50000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
150 — 500 MHz
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
70 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
75 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
10000 nA
Emitter-Base Voltage
5 V
Fall Time (tf)
50 ns
HTS Code
8541.21.0075
Input Capacitance (Cib)
110 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
20 pF
Power Dissipation
4 W
Power Dissipation
800 mW
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
350 ns
Turn On Time (ton)
100 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active60V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) PNP High CurrentBox500LEAD or TINNo

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:CapAnalytical Test Report
Analytical Test Report:HeaderAnalytical Test Report
Analytical Test Report:Header AssemblyAnalytical Test Report
Analytical Test Report:Pure Tin SolderAnalytical Test Report
LSSGP063.PDFDevice Datasheet
Material Composition:TO-39Material Composition
Package Detail Document:TO-39Package Detail Document
Product Reliability Data:TO-39 Package ReliabilityProduct Reliability Data
Spice Model:Spice Model 2N4032Spice Model

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