2N4036
65V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High Current
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.4 V
Case Type
TO-39
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Voltage
90 V
Collector-Emitter Breakdown Voltage (BVCEO)
65 V
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
650 mV
Collector-Emitter Voltage (VCEO)
65 V
Continuous Base Current
500 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
40 — 140 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
20 — 200 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
10000 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
30 pF
Power Dissipation
5 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
35 °C/W
Turn Off Time (toff)
700 ns
Turn On Time (ton)
110 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 65V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High Current | Box | 500 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N4036.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |