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2N4058

30V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.5 — 1 V
Case Type
TO-92
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
700 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current
200 mA
DC Current Gain (hFE)
100 — 400 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
5 dB
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
100 — 550 x10³
Storage Temperature (Tstg)
-65 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active30V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseBox2,500LEAD or TINNo
Active30V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseAmmo2,000LEAD or TINNo
Active30V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseTape & Reel2,000LEAD or TINNo

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