2N4235
60V,3A,1W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
TO-39
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
200 mA
Continuous Collector Current
3 A
Current Gain-Bandwidth Product (fT)
3 MHz
DC Current Gain (hFE)
30 — 175 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
500000 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
100 pF
Power Dissipation
6 W
Power Dissipation
1 W
Small Signal Current Gain (hfe)
25 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
29 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 60V,3A,1W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | Box | 500 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| 2N4234-4236.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |