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2N4264

15V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Saturated Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.75 — 0.95 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.65 — 0.8 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
20 V
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Cutoff Current (ICEV)
0.1 µA
Collector-Emitter Cutoff Current (ICEV)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
220 mV
Collector-Emitter Voltage (VCEO)
15 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
350 MHz
DC Current Gain (hFE)
40 — 160 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
25 x10³
Delay Time (td)
8 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
Fall Time (tf)
15 ns
HTS Code
8541.21.0075
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
4 pF
Power Dissipation
625 mW
Rise Time (tr)
15 ns
Storage Temperature (Tstg)
-55 — 150 °C
Storage Time (ts)
20 ns
Thermal Resistance Junction-Ambient
200 °C/W
Total Control Charge (QT)
0.08 nC
Turn Off Time (toff)
35 ns
Turn On Time (ton)
25 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued, Stock Only15V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Saturated SwitchBox2,500TINNo
Discontinued, Stock Only15V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Saturated SwitchTape & Reel2,000PBFREE

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