2N4271
5W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
175 V
Collector-Base Cutoff Current (ICBO)
500 nA
Collector-Emitter Breakdown Voltage (BVCEO)
140 V
Collector-Emitter Saturation Voltage (VCE(SAT))
800 mV
DC Current Gain (hFE)
20 — 140 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
5 W
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 5W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP063.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |