2N4299
250V,1A,20W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Specifications
Base-Emitter On Voltage (VBE(ON))
0.9 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
TO-66
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Voltage
350 V
Collector-Emitter Breakdown Voltage (BVCEO)
250 V
Collector-Emitter Cutoff Current (ICEV)
600 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Voltage (VCEO)
250 V
Continuous Base Current
250 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
20 MHz
DC Current Gain (hFE)
50 — 150 x10³
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
35 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
4 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 175 °C
Output Capacitance (Cob)
6 pF
Power Dissipation
20 W
Second Breakdown Collector Current (Is/b)
0.075 A
Storage Temperature (Tstg)
-65 — 175 °C
Thermal Resistance Junction-Case
7.5 °C/W
Turn Off Time (toff)
10000 ns
Turn On Time (ton)
7000 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Discontinued | 250V,1A,20W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | Sleeve | 30 | TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Leads | Analytical Test Report |
| 2N4296.PDF | Device Datasheet |
| Material Composition:TO-66 | Material Composition |
| Package Detail Document:TO-66 | Package Detail Document |
| Process Change Notice:CP319 replaced by CP212 | Process Change Notice |
| Product EOL Notice:BCY79-VIII | Product EOL Notice |
| Product Reliability Data:TO-66 Package Reliablity | Product Reliability Data |